The decade old Rowhammer case prevents electrical interactions between the cells in DRAM chips, but by repeated access of data in the memory line, the data in the adjacent lines may be corrupted.
To reduce this risk, a team of researchers was able to overcome the deficit using “Rowhammer access patterns that are unique and frequent -Target Row Refresh (TRR). All published Rowhammer access patterns have so far used lines in the same way, and TRR uses this behavior to identify ‘attacker’ lines and revive nearby ‘victim’ lines to prevent failure.
Read More: Securityweek
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